Lisa Regler1, Simon Reiss1, Niklas Verloh2, Wibke Uller2, and Michael Bock1
1Division of Medical Physics, Dept. of Diagnostic and Interventional Radiology, Medical Physics, University Medical Center Freiburg, Faculty of Medicine, University of Freiburg, Freiburg, Germany, 2Dept. of Diagnostic and Interventional Radiology, Medical Physics, University Medical Center Freiburg, Faculty of Medicine, University of Freiburg, Freiburg, Germany
Synopsis
Keywords: In Silico, Artifacts
Motivation: RF shielding up to 95% in stents creates image artifacts that can impact an accurate diagnosis of vessel patency after stent implantation.
Goal(s): The association between design parameters of novel venous stents and their RF shielding properties were investigated.
Approach: Therefore, field simulations and measurements were performed of the relative induced B1 in venous stents with different lengths and cell geometries.
Results: Edge length of the stent cells and their orientation relative to the B1 transmit field determine the amount of RF shielding.
Impact: The work provides information about the correlation of venous stent geometries and RF shielding artifacts. Sequence parameters e.g. excitation flip angle could be
adapted for different stent models to possibly achieve higher intraluminal signal in
post-implantation MRI venography.
Introduction
MRI is increasingly used for imaging of venous
compression syndromes and, consequently, could provide additional information
about vessel patency after stent implantation1. Aside from the risk
of radiofrequency (RF)-induced heating, image artifacts from RF shielding may
impair the diagnostic value of MRI post stent implantation2-3. Image artifacts of all currently available
dedicated venous stents showed only minor susceptibility-induced artifacts at
1.5 T4; however, shielding of the transmit B1 field by the stent reduces the intraluminal signal
intensity depending on the type of stent and geometry. This work further
analyzes these findings and complements them by a systematic finite difference
time domain (FDTD) simulation study of the B1
interaction of laser-cut venous stents at both the 1.5 and the 3 T Larmor
frequencies.Methods
18 different digitized models of venous stents
were simulated with the FDTD software Sim4Life (v7.2.3, ZürichMedTech AG,
Zürich, Switzerland). The models mimic laser-cut venous stents, i.e., they were
comprised of a regular grid pattern on a cylindrical surface. A cylinder
diameter of 16 mm was chosen which corresponds to a typical venous stent in
the common iliac vein. The RF shielding was assessed for different stent
parameters: cell width (l1),
cell length (l2), total
length, cell structure, orientation relative to B0 (referred to as orthogonal and parallel in terms of
the stents‘ longitudinal axis), and field strength (1.5 T and 3 T). The stents
were simulated as perfect electric conductors (PEC) immersed in water. To
assess the dependency on the polarization of the transmit field, simulations
were performed with both, linear (for 1.5 T) and circular polarized (for 1.5
and 3 T) RF fields. To quantify the RF shielding, B1 within a small ROI in the stent center (B1,ROI) and the undisturbed B1 outside the stent were
determined, and the relative induced B1
field (Brel1,ind)
in the stent was calculated: Brel1,ind = (B1- B1,ROI)/B1. The results were compared to previous results of in vitro experiments at a 1.5 T system
(Siemens Symphony)5.Results
The total length of the stents had no effect on Brel1,ind for both
stent orientations (Fig. 1a). Also, Brel1,ind
was similar for stents with shifted or regular cell structure (Fig. 1b). However,
the stents oriented parallel to B0 showed a linear dependence Brel1,ind on cell
width l1 for both, simulation (Rsim2 = 0.99)
and experiment (Rexp2 = 0.96) with negative slope (Fig. 2a).
For stents positioned orthogonal to B0,
no correlation of Brel1,ind
and l1 could be found (Rsim2 = 0.68, Rexp2
= 0.64). No correlation was found between Brel1,ind
and the cell length l2, regardless of the stent orientation. Stents
with the same cell dimensions mostly exhibited a stronger shielding for the simulation
compared to the measurement, where the difference remained constant by approximately
30% for identical l1. Furthermore, B0 did not influence Brel1,ind regardless
of stent orientation or size (Fig. 3a). In linearly polarized transmit fields Brel1,ind depended
linearly on l2 if the
stents were oriented orthogonal to B0
(Fig. 3b).Discussion & Conclusion
The results show that the cell size of venous
stents strongly influence their RF shielding property. A negative linear correlation
was found between the cell length and Brel1,ind in both, measurements and simulations,
which was independent of other design parameters (overall stent length, grid
structure, Larmor frequency). The simulations with linear polarized B1
fields revealed that only the edge length of the cells parallel to the B1 component of the transmit
field determines the amount of RF shielding. As circular polarized transmit
fields are used in birdcage body coils, a linear dependence was only found in measurements
when the stent was oriented parallel to B0,
i.e. both B1 components were
parallel to the cell width l1.
If the stent is orthogonal to B0,
the B1 field is polarized along
both the cell length and width such that both parameters influence the RF shielding.
The lower Brel1,ind values found in
the measurements may be a result of the overestimation of the stent
conductivity in the simulations: realistic stents have a finite non-vanishing
resistance which reduces the induced currents and, thus, the RF shielding. The study highlights the importance of
the stent cell geometry of novel venous stents. With these results, sequence
parameters such as the excitation flip angle may be adapted for different
stents to achieve a higher intraluminal signal in post-implantation MRI venography.Acknowledgements
This project received
funding by The Federal Ministry of Education and Research (BMBF) under project
number 13GW0366C.References
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