Jessica A. Martinez1, Kevin Moulin1, and Daniel B. Ennis1,2,3
1Radiological Sciences, Stanford University, stanford, CA, United States, 2Division of Radiology, Veteran Affairs Health Care System, Palo Alto, CA, United States, 3Cardiovascular Institute, Stanford University, Stanford, CA, United States
Synopsis
RF-induced heating was performed at different baseline temperatures (TB). Along with temperature increase, B1-maps, conductivity (σ) and the dielectric permittivity(ε) were analyzed. when TB increases, σ and ε increase. However, RF- induced heating decreases.
Introduction
RF-induced heating is a major safety consideration
during MRI examinations. To mitigate temperature increase, RF-power is
controlled by limiting the specific absorption rate (SAR, W/kg). However, the
scanner’s reported SAR is a simplified model-based estimation. During MRI exams
an active implanted medical device (AIMD) is prone to RF-induced heating, mostly
due to antenna effects. As a result, RF-energy is transformed into a temperature
increase that can result in tissue heating, especially at the lead-tip. Because
the interactions are localized at the device-tissue interface, the scanner’s
reported SAR is an inadequate method to estimate RF-induced heating. Therefore,
in general, analysis of RF-induced AIMD lead-tip heating is performed following
the F2182−11a ASTM method, wherein the temperature increase is measured using
fiber optic temperature probes that are placed near the device under
examination.
RF-induced heating depends on the immersive
media’s electrical properties: conductivity (σ) and the dielectric permittivity (ε). While σ represents the ease with which RF-current
conducts. ε characterizes the propagation of the electric-field in the media relates
to the media’s polarization and the dissipation of electric energy into heat or
loss factor (ε”; proportional to σ/ω, where ω is the RF-frequency) [1]. It has
been shown that σ increases with temperature (Figure 1). The latter suggests
that the baseline temperature (TB) of the immersive media will
affect RF-induced device heating. B1 mapping techniques have been
proposed as a method to estimate the media’s electrical properties [2].
Therefore, B1-maps can carry information related to the rate of
temperature increase.
The objective of this work was
to analyze RF-induced heating for titanium ASTM-reference rod placed in the ASTM
phantom. Temperature data along with B1-maps were acquired for different TBs.
The media’s electrical properties were also analyzed.Methods
Experiments were performed on an ASTM-phantom
filled with poly-acrylic acid (PAA) gel at 3T (Siemens, Skyra). A 13cm, 1/8inch
titanium ASTM-reference rod was placed on the left side of the phantom and at
9cm from the anterior position (Figure 2-A). This corresponds to a common AIMD
implant location. Thermal data was acquired using fluoroptic temperature probes
(Lumasense Technologies). One probe was fixed in a tip-to-tip configuration at
the end of the rod. RF-induced heating experiments were separated into two parts:
Part-1 analyzed the effect of TB
on RF-induced heating only (Figure 2-B).
Temperature data was recorded at SAR~4 W/kg for four repeated runs of a turbo
spin-echo sequence (5 minutes each) with intervals of one minute between each
run. TB was defined as the mean temperature 30 seconds before each TSE
sequence started.
Part-2 analyzed the relationship between the
electrical properties and TB (Figure 2-C). Experiments were repeated
on the same phantom for two TBs. The first TB corresponded
to the scanner’s room temperature (18.7C); whereas the second TB
corresponded to the phantom warmed outside the scanner room (31.3C). For both TBs,
RF-induced heating experiments were performed (15 minutes of RF exposure ~4
W/kg), σ measurements and B1-maps were acquired. σ was measured
using a conductivity meter, whereas the B1-maps were acquired using
an EPI double angle technique [3]. From the B1-maps, ε-maps for both
TBs were estimated [4]. Results
The results for Part-1 are shown in Figure 3. The temperature increase (đ«T)
for the four consecutive runs are shown in Figure 3-A. After each run, TB
increased but đ«T decreased. Maximum đ«T
during RF-exposure (đ«Tmax) is
shown in Figure 3-B. When TB increased, đ«Tmax
decreased. For the first TB (30.4C) đ«Tmax
was 4.7C. For the last run (TB: 34.5C) đ«Tmax
was 2.6C.
The results
for Part-2 are shown in Figure 4. Figure
4-A shows the calculated B1-maps for both TBs (18.7C and
31.3C). Results suggest that the magnitude of B1 decreased with
increasing temperature. The estimated ε (Figure
4-B) shows an increased value with increasing temperature. σ also increased when
increasing Temperature (0.49 S/m vs. 0.58 S/m).
đ«T
curves for both TBs are shown in Figure 4-C. As observed in the experiments
in Part-1, RF-induced heating decreased
when TB increased. For a TB=18.7C, đ«Tmax
was 8.3C. On the other hand, For TB=31.3C, đ«Tmax
was 5.3C.
Discussion and Conclusion
Results here show that RF-induced
heating decreases when the media baseline temperature increases. The
latter is attributed to the increased value of the media’s electrical
properties with temperature. Therefore, temperature control and monitoring of
the media is important for device testing during RF exposure.
Similar results have been observed
during RF heating at 27 MHz [5]. Where an inverse relationship between the loss
factor (ε”) and RF-heating rate was observed. Consequently, for greater ε”, a
smaller amount of RF-energy was absorbed by the analyzed sample. Lastly, these results suggest that the
evaluation of RF-induced heating of medical devices can benefit from the analysis of the
media’s electrical properties using MRI-based techniques. More specifically, B1-maps
are a promising approach to measure the change of electrical properties when
increasing temperature.
Further work needs to be performed to more
precisely calculate electrical properties from B1-maps. Acknowledgements
This project was supported, in part, by NIH R01 HL131823 to DBEReferences
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