David Otto Brunner1, Lukas Furrer2, Markus Weiger1, Werner Baumberger2, Thomas Schmid1, Jonas Reber1, Benjamin Emanuel Dietrich1, Bertram Jakob Wilm1,3, Romain Froidevaux1, and Klaas Paul Pruessmann1
1Institute for Biomedical Engineering, University of Zurich and ETH Zurich, Zurich, Switzerland, 2ZSN Center for Signal Processing and Communications, University of Applied Sciences Winterthur, Winterthur, Switzerland, 3Skope Magnetic Resonance Technologies, Zurich, Switzerland
Synopsis
Dead-times after the
excitation pulse of the order of 1 µs are required for imaging approaches for
short T2 compounds such as UTE, ZTE or SWIFT. Here we present a multi-channel
T/R interface box employing symmetrically biased T/R switches which, in
conjunction with a novel diode driver, provide signal rise times of
350 ns. The unit further comprises fiber-optic triggering, biasing, and
malfunction detection. Its performance is demonstrated by low artefact ZTE
scans with 500 kHz at 7T.Introduction
Observation of compounds with very short signal
life times by methods such as ultra-short echo time (UTE) [1], Zero Echo Time
(ZTE) [2] or Swept Imaging with Fourier Transform (SWIFT) [3] prompts for Transmit-Receive
(T/R) switches with settling times of the order of 1 µs. Since clinical
MRI systems typically provide transient times which are at least an order of
magnitude longer, custom units need to be deployed and integrated into the
scanner’s radio frequency (RF) front-end, which poses some questions about control
and system protection. Here we present a novel 8-channel unit of T/R switches
with symmetric biasing [4] comprising optical trigger lines, malfunction
surveillance and a novel bias driver circuitry for this purpose.
Methods
For T/R array applications, a box able to house
8 T/R switches for 7 T, preamplification, bias drivers, malfunction
detection and fibre-optical triggering was constructed (Fig. 1a&d). Each
T/R switch unit is built in a symmetrically biased PIN diode architecture (Fig. 1b,
[4]) enabling fast switching while producing a very low spike/video leakage due
to its inherent cancellation of the diode biasing signal on the RF signal lines.
For diode biasing, common-mode chokes are deployed. Compared with bias inductor
chokes the low-pass filtering of the control signal flank is thereby avoided since
the common-mode chokes provide a low impedance for the differentially routed
biasing signal but nevertheless choke the RF signals by their high inductance presented
to the RF signals which run as common-mode to the choke. Furthermore, a novel differential,
high peak current (2 A) diode driver was developed (Fig. 1c). Fast
settling and low common-mode levels of the bias voltages are achieved by an
active feed-back regulation. For monitoring fail states, the reverse voltages
and the forward currents are monitored in real-time and an assertion signal confirming
the proper settling of the units in the demanded state is generated. In order
to prevent interferences on the high speed trigger and assertion lines these
signals are routed in an optical fibre. A unit installed outside the Faraday
cage provides the required supply voltages and trigger interfaces for standard
voltage levels.
Results
The switch offers a 10-99% signal rise time of
350 ns with a total video leakage of 20 mVpp and an
in-band noise transient of -89 dBm (Fig. 2a) such that clean acquisitions
1 µs after the RF pulse are demonstrated. The RF signal characteristics
are collected in Fig. 2b. The performance of the unit is demonstrated in a
ZTE experiment with 500 kHz total bandwidth and the background signal
artefact level is assessed (Fig. 2c) with a standard volume resonator (Noval
Medical, Wilmington, USA) and with a custom, proton free loop coil (e). This proved
to be a very sensitive indicator for remnant signal modulations or cracklings
after throwing the switch. This is shown in (Fig. 2d) which was acquired
with the same setup except using a T/R switch in a traditional design providing
~1 µs signal rise times. Further, an in-vivo image of healthy human
subject was acquired (Fig. 2f). The measurements were performed on a human
7 T scanner (Philips Healthcare, Best, Netherlands) and the RF signals
were acquired with a high-bandwidth spectrometer (Skope MRT, Zurich,
Switzerland).
Discussion
The novel,
symmetrically biased, high power T/R switch RF frontend enables acquisitions
with total dead time after an excitation pulse of about 1 µs such that
echo times and k-space gaps in ZTE scans become dominated by the duration of
the RF pulse itself, even for very small flip angles. The optical triggering and
system monitoring provide facile means to integrate the unit into the scanner
environment. It is exemplified that ZTE scans under the full available gradient
strength and a bandwidth of 500 kHz are obtained with very low artefact
levels.
The applied
PIN diode biasing topology can analogously be implemented for active detuning
of receive and transmit only coils since the applied tank circuits are
topologically equivalent to the deployed isolation stages in the switch.
Acknowledgements
No acknowledgement found.References
1) Bergin
et al. Radiol 1991 2) Weiger et al. MRM 2011 3) Idiyatullin et al. JMR 2006, 4)
Brunner et al. ISMRM 2014